tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 1 of 3 revised 0 5 /201 6 CE420860 three - phase scr/diode bridge modules 60 amperes/800 volts features: applications : CE420860 three - phase scr/diode bridge modules 60 amperes/800 volts outline drawing dimension inches millimeters a 3.386 86 b 2.9130.012 740.3 c 2.441 62 d 1.7720.008 450.2 e 1.220 31 f 1.122 28.5 g 1.063 27 h 0.866 22 j 0.787 20 k 0.276 7 l 0.236 6 m 0.2170.008 dia. 5.50.2 dia. n m5metric m5 voltage current rating type volts (x100) amperes (60) ce42 08 60
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 2 of 3 revised 0 5 /201 6 CE420860 three - phase scr/diode bridge modules 60 amperes/800 volts absolute maximum ratings characteristics symbol CE420860 units peak forward blocking voltage v drm 800 volts transient peak forward blocking voltage (non - repetitive), t < 5ms v dsm 960 volts dc forward blocking voltage v d(dc) 640 volts peak reverse blocking voltage v rrm 800 volts transient peak reverse blocking voltage (non - repetitive), t < 5ms v rsm 960 volts dc reverse blocking voltage v r(dc) 640 volts dc output current, t c = 80c i o 60 amperes peak one - cycle surge (non - repetitive) on - state current (60hz) i tsm , i fsm 500 amperes peak one - cycle surge (non - repetitive) on - state current (50hz) i tsm , i fsm 460 amperes i 2 t (for fusing), 8.3 milliseconds i 2 t 1050 a 2 sec critical rate - of - rise of on - state current* di/dt 100 amperes/ s peak gate power dissipation p gm 5.0 watts average gate power dissipation p g(av) 0.5 watts peak forward gate voltage v gfm 10 volts peak reverse gate voltage v grm 5.0 volts peak forward gate current i gfm 2.0 amperes storage temperature t stg - 40 to 125 c operating temperature t j - 40 to 125 c maximum mounting torque m5 mounting screw 17 in. - lb. maximum mounting torque m5 terminal screw 17 in. - lb. module weight (typical) 310 grams v isolation v rms 2000 volts *t j = 125c, i g = 0.5a, v d = 1/2 v drm
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice document page 3 of 3 revised 0 5 /201 6 CE420860 three - phase scr/diode bridge modules 60 amperes/800 volts electrical and thermal characteristics, t j = 25c unless otherwise specified characteristics symbol test conditions CE420860 units blocking state maximums forward leakage current, peak i drm t j = 125c, v drm = rated 4.0 ma reverse leakage current, peak i rrm t j = 125c, v rrm = rated 4.0 ma conducting state maximums peak on - state voltage v fm i fm = 75a, i tm = 75a 1.4 volts switching minimums critical rate - of - rise of off - state voltage dv/dt t j = 125c, v d = 2/3 v drm 500 volts/ s thermal maximums thermal resistance, junction - to - case r ? (j - c) per module 1.5 c/watt thermal resistance, case - to - sink (lubricated) r ? (c - s) per module 0.06 c/watt gate parameters maximums gate current - to - trigger i gt v d = 6v, r l = 2 ? 50 ma gate voltage - to - trigger v gt v d = 6v, r l = 2 ? 2.0 volts non - triggering gate voltage v gdm t j = 125c, v d = 1/2 v drm 0.25 volts
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